Array ( [0] => {{Short description|Sensors of light or other electromagnetic energy}} [1] => {{Lead too short|date=January 2020}} [2] => {{Use American English|date=May 2016}} [3] => [[File:CD-ROM Photodetector.jpg|thumb|upright=1.3|A photodetector salvaged from a [[CD-ROM drive]]. The photodetector contains three [[photodiode]]s, visible in the photo (in center).]] [4] => [5] => '''Photodetectors''', also called '''photosensors''', are [[sensors]] of [[light]] or other [[electromagnetic radiation]].{{cite journal|doi=10.1063/1.2884264|title=Study of residual background carriers in midinfrared InAs/GaSb superlattices for uncooled detector operation|year=2008|last1=Haugan|first1=H. J.|last2=Elhamri|first2=S.|last3=Szmulowicz|first3=F.|last4=Ullrich|first4=B.|last5=Brown|first5=G. J.|last6=Mitchel|first6=W. C.|journal=Applied Physics Letters|volume=92|issue=7|page=071102|bibcode = 2008ApPhL..92g1102H |s2cid=39187771 }} There are a wide variety of photodetectors which may be classified by mechanism of detection, such as [[Photoelectric effect|photoelectric]] or photochemical effects, or by various performance metrics, such as spectral response. [[Semiconductor]]-based photodetectors typically [6] => use a [[p–n junction]] that converts [[photons]] into charge. The absorbed photons make electron–hole pairs in the depletion region. Photodiodes and photo transistors are a few examples of photo detectors. Solar cells convert some of the light energy absorbed into electrical energy. [7] => [8] => == Classification == [9] => Photodetectors can be classified based on their mechanism of operation and device structure. Here are the common classifications: [10] => [11] => === Based on mechanism of operation === [12] => [[Image:USB-photodetector.png|thumb|right|A commercial amplified photodetector for use in optics research]] [13] => [14] => Photodetectors may be classified by their mechanism for detection:{{cite web|last1=Donati|first1=S.|title=Photodetectors|url=http://www-3.unipv.it/donati/private/Photodetectors/introd.pdf|website=unipv.it|publisher=Prentice Hall|access-date=1 June 2016}}{{Unreliable source?|date=March 2017}}{{cite journal|last1=Yotter|first1=R.A.|last2=Wilson|first2=D.M.|title=A review of photodetectors for sensing light-emitting reporters in biological systems|journal=IEEE Sensors Journal|date=June 2003|volume=3|issue=3|pages=288–303|doi=10.1109/JSEN.2003.814651|bibcode=2003ISenJ...3..288Y}}{{cite journal|last1=Stöckmann|first1=F.|title=Photodetectors, their performance and their limitations|journal=Applied Physics|date=May 1975|volume=7|issue=1|pages=1–5|doi=10.1007/BF00900511|bibcode=1975ApPhy...7....1S|s2cid=121425624 }} [15] => [16] => * Photoconductive effect: These detectors work by changing their electrical conductivity when exposed to light. The incident light generates electron-hole pairs in the material, altering its conductivity. Photoconductive detectors are typically made of semiconductors.{{Cite journal |last1=Singh |first1=Yogesh |last2=Kumar |first2=Manoj |last3=Yadav |first3=Reena |last4=Kumar |first4=Ashish |last5=Rani |first5=Sanju |last6=Shashi |last7=Singh |first7=Preetam |last8=Husale |first8=Sudhir |last9=Singh |first9=V. N. |date=2022-08-15 |title=Enhanced photoconductivity performance of microrod-based Sb2Se3 device |url=https://www.sciencedirect.com/science/article/pii/S0927024822001854 |journal=Solar Energy Materials and Solar Cells |language=en |volume=243 |pages=111765 |doi=10.1016/j.solmat.2022.111765 |issn=0927-0248}} [17] => [18] => * [[Photoemission]] or photoelectric effect: Photons cause electrons to transition from the [[conduction band]] of a material to free electrons in a vacuum or gas. [19] => * Thermal: Photons cause electrons to transition to mid-gap states then decay back to lower bands, inducing [[phonon]] generation and thus heat. [20] => * [[Polarization (waves)|Polarization]]: Photons induce changes in polarization states of suitable materials, which may lead to change in [[index of refraction]] or other polarization effects. [21] => * Photochemical: Photons induce a chemical change in a material. [22] => * Weak interaction effects: photons induce secondary effects such as in photon drag{{cite journal|last1=A. Grinberg|first1=Anatoly|last2=Luryi|first2=Serge|title=Theory of the photon-drag effect in a two-dimensional electron gas|journal=Physical Review B|date=1 July 1988|volume=38|issue=1|pages=87–96|doi=10.1103/PhysRevB.38.87|pmid=9945167 |bibcode=1988PhRvB..38...87G}}{{cite journal|last1=Bishop|first1=P.|last2=Gibson|first2=A.|last3=Kimmitt|first3=M.|title=The performance of photon-drag detectors at high laser intensities|journal=IEEE Journal of Quantum Electronics|date=October 1973|volume=9|issue=10|pages=1007–1011|doi=10.1109/JQE.1973.1077407|bibcode=1973IJQE....9.1007B}} detectors or gas pressure changes in [[Golay cell]]s. [23] => [24] => Photodetectors may be used in different configurations. Single sensors may detect overall light levels. A 1-D array of photodetectors, as in a [[spectrophotometer]] or a [[Line scanner]], may be used to measure the distribution of light along a line. A 2-D array of photodetectors may be used as an [[image sensor]] to form images from the pattern of light before it. [25] => [26] => A photodetector or array is typically covered by an illumination window, sometimes having an [[anti-reflective coating]]. [27] => [28] => === Based on device structure === [29] => Based on device structure, photodetectors can be classified into the following categories: [30] => [31] => # '''MSM Photodetector:''' A metal-semiconductor-metal (MSM) photodetector consists of a semiconductor layer sandwiched between two metal electrodes. The metal electrodes are interdigitated, forming a series of alternating fingers or grids. The semiconductor layer is typically made of materials such as [[silicon]] (Si), [[gallium arsenide]] (GaAs), [[indium phosphide]] (InP) or [[antimony selenide]] (Sb2Se3). Various methods are employed together to improve its characteristics, such as manipulating the vertical structure, etching, changing the substrate, and utilizing plasmonics.{{Cite journal |last1=Singh |first1=Yogesh |last2=Parmar |first2=Rahul |last3=Srivastava |first3=Avritti |last4=Yadav |first4=Reena |last5=Kumar |first5=Kapil |last6=Rani |first6=Sanju |last7=Shashi |last8=Srivastava |first8=Sanjay K. |last9=Husale |first9=Sudhir |last10=Sharma |first10=Mahesh |last11=Kushvaha |first11=Sunil Singh |last12=Singh |first12=Vidya Nand |date=2023-06-16 |title=Highly Responsive Near-Infrared Si/Sb 2 Se 3 Photodetector via Surface Engineering of Silicon |url=https://pubs.acs.org/doi/10.1021/acsami.3c04043 |journal=ACS Applied Materials & Interfaces |volume=15 |issue=25 |pages=30443–30454 |language=en |doi=10.1021/acsami.3c04043 |issn=1944-8244}} The best achievable efficiency is shown by Antimony Selenide photodetectors. [32] => # '''Photodiodes:''' Photodiodes are the most common type of photodetectors. They are semiconductor devices with a PN junction. Incident light generates electron-hole pairs in the depletion region of the junction, producing a photocurrent. Photodiodes can be further categorized into: a. PIN Photodiodes: These photodiodes have an additional intrinsic (I) region between the P and N regions, which extends the depletion region and improves the device's performance. b. Schottky Photodiodes: In Schottky photodiodes, a metal-semiconductor junction is used instead of a PN junction. They offer high-speed response and are commonly used in high-frequency applications. [33] => # '''Avalanche Photodiodes (APDs):''' APDs are specialized photodiodes that incorporate avalanche multiplication. They have a high electric field region near the PN junction, which causes impact ionization and produces additional electron-hole pairs. This internal amplification improves the detection sensitivity. APDs are widely used in applications requiring high sensitivity, such as low-light imaging and long-distance optical communication.{{Citation |last1=Stillman |first1=G. E. |title=Chapter 5 Avalanche Photodiodes**This work was sponsored by the Defense Advanced Research Projects Agency and by the Department of the Air Force. |date=1977-01-01 |url=https://www.sciencedirect.com/science/article/pii/S0080878408601507 |volume=12 |pages=291–393 |editor-last=Willardson |editor-first=R. K. |access-date=2023-05-11 |series=Semiconductors and Semimetals |publisher=Elsevier |language=en |last2=Wolfe |first2=C. M. |editor2-last=Beer |editor2-first=Albert C.}} [34] => # '''Phototransistors:''' Phototransistors are transistors with a light-sensitive base region. Incident light causes a change in the base current, which controls the transistor's collector current. Phototransistors offer amplification and can be used in applications that require both detection and signal amplification. [35] => # '''Charge-Coupled Devices (CCDs):''' CCDs are imaging sensors composed of an array of tiny capacitors. Incident light generates charge in the capacitors, which is sequentially read and processed to form an image. CCDs are commonly used in digital cameras and scientific imaging applications. [36] => # '''CMOS Image Sensors (CIS):''' CMOS image sensors are based on complementary metal-oxide-semiconductor (CMOS) technology. They integrate photodetectors and signal processing circuitry on a single chip. CMOS image sensors have gained popularity due to their low power consumption, high integration, and compatibility with standard CMOS fabrication processes. [37] => # '''Photomultiplier Tubes (PMTs):''' PMTs are vacuum tube-based photodetectors. They consist of a photocathode that emits electrons when illuminated, followed by a series of dynodes that multiply the electron current through secondary emission. PMTs offer high sensitivity and are used in applications that require low-light detection, such as particle physics experiments and scintillation detectors. [38] => [39] => These are some of the common photodetectors based on device structure. Each type has its own characteristics, advantages, and applications in various fields, including imaging, communication, sensing, and scientific research. [40] => [41] => == Properties == [42] => There are a number of performance metrics, also called [[Figure of merit|figures of merit]], by which photodetectors are characterized and compared [43] => * [[Quantum efficiency]]: The number of carriers (electrons or [[Electron hole|hole]]s) generated per photon. [44] => * [[Responsivity]]: The output current divided by total light power falling upon the photodetector. [45] => * [[Noise-equivalent power]]: The amount of light power needed to generate a signal comparable in size to the [[noise]] of the device. [46] => * [[Specific detectivity|Detectivity]]: The square root of the detector area divided by the noise equivalent power. [47] => * Gain: The output current of a photodetector divided by the current directly produced by the photons incident on the detectors, i.e., the built-in [[current gain]]. [48] => * [[Dark current (physics)|Dark current]]: The current flowing through a photodetector even in the absence of light. [49] => * [[Response time (technology)|Response time]]: The time needed for a photodetector to go from 10% to 90% of final output. [50] => * Noise spectrum: The intrinsic noise voltage or current as a function of frequency. This can be represented in the form of a [[noise spectral density]]. [51] => * Nonlinearity: The RF-output is limited by the nonlinearity of the photodetector{{cite journal|last1=Hu|first1=Yue|title=Modeling sources of nonlinearity in a simple pin photodetector|journal=Journal of Lightwave Technology|date=1 October 2014|volume=32|issue=20|pages=3710–3720|url=https://www.osapublishing.org/jlt/abstract.cfm?uri=jlt-32-20-3710|bibcode=2014JLwT...32.3710H|doi=10.1109/JLT.2014.2315740|citeseerx=10.1.1.670.2359|s2cid=9882873 }} [52] => * Spectral response: The response of a photodetector as a function of photon frequency. [53] => [54] => == Subtypes == [55] => Grouped by mechanism, photodetectors include the following devices: [56] => [57] => === Photoemission or photoelectric=== [58] => * [[Gaseous ionization detector]]s are used in experimental [[particle physics]] to detect photons and particles with sufficient energy to [[ionize]] gas atoms or molecules. Electrons and ions generated by ionization cause a current flow which can be measured. [59] => * [[Photomultiplier]] tubes containing a [[photocathode]] which emits [[electron]]s when illuminated, the electrons are then amplified by a chain of [[dynode]]s. [60] => * [[Phototube]]s containing a [[photocathode]] which emits [[electron]]s when illuminated, such that the tube conducts a current proportional to the [[Irradiance|light intensity]]. [61] => * [[Microchannel plate detector]]s use a porous glass substrate as a mechanism for multiplying electrons. They can be used in combination with a photocathode like the photomultiplier described above, with the porous glass substrate acting as a [[dynode]] stage [62] => [63] => === Semiconductor === [64] => * [[Active-pixel sensor]]s (APSs) are [[image sensor]]s. Usually made in a [[complementary metal–oxide–semiconductor]] (CMOS) process, and also known as CMOS image sensors, APSs are commonly used in cell phone cameras, web cameras, and some [[Digital single-lens reflex camera|DSLRs]]. [65] => * [[Cadmium zinc telluride]] radiation detectors can operate in direct-conversion (or photoconductive) mode at room temperature, unlike some other materials (particularly germanium) which require liquid nitrogen cooling. Their relative advantages include high sensitivity for x-rays and gamma-rays, due to the high atomic numbers of Cd and Te, and better energy resolution than scintillator detectors. [66] => * [[Charge-coupled device]]s (CCD) are image sensors which are used to record images in [[astronomy]], [[digital photography]], and [[digital cinematography]]. Before the 1990s, [[photographic plate]]s were most common in astronomy. The next generation of astronomical instruments, such as the [[Astro-E2]], include [[cryogenic detectors]].{{Update inline|reason=The Astro-E2 was launched in 2005, and shut down in 2015 after it had exceeded its intended mission time by 8 years, although the cryogenic X-Ray detector vented all Helium after 19 days. That's not exactly next generation|date=August 2023}} [67] => * [[HgCdTe]] infrared detectors. Detection occurs when an infrared photon of sufficient energy kicks an electron from the valence band to the conduction band. Such an electron is collected by a suitable external readout integrated circuits (ROIC) and transformed into an electric signal. [68] => * [[LED]]s which are reverse-biased to act as photodiodes. See [[LEDs as photodiode light sensors]]. [69] => * [[Photoresistor]]s or ''Light Dependent Resistors'' (LDR) which change [[electrical resistance|resistance]] according to [[Irradiance|light intensity]]. Normally the resistance of LDRs decreases with increasing intensity of light falling on it.{{cite web|url=http://oscience.info/infos/photo-detector-circuit/|title=Photo Detector Circuit|work=oscience.info}} [70] => * [[Photodiode]]s which can operate in [[Photovoltaic effect|photovoltaic]] mode or [[photoconductive]] mode.{{cite book|last1=Pearsall|first1=Thomas|title=Photonics Essentials, 2nd edition|publisher=McGraw-Hill|date=2010|url=https://www.mheducation.com/highered/product/photonics-essentials-second-edition-pearsall/9780071629355.html|isbn=978-0-07-162935-5|access-date=2021-02-24|archive-date=2021-08-17|archive-url=https://web.archive.org/web/20210817005021/https://www.mheducation.com/highered/product/photonics-essentials-second-edition-pearsall/9780071629355.html|url-status=dead}}{{Cite web|url=https://www.rp-photonics.com/photodetectors.html|title=Encyclopedia of Laser Physics and Technology - photodetectors, photodiodes, phototransistors, pyroelectric photodetectors, array, powermeter, noise|last=Paschotta|first=Dr. Rüdiger|website=www.rp-photonics.com|access-date=2016-05-31}} Photodiodes are often combined with low-noise analog electronics to convert the [[photocurrent]] into a voltage that can be [[digitization|digitized]].{{cite web| url = https://www.thorlabs.com/drawings/f6d76d5893edbf38-CD161A84-96F3-D89C-CC3AA1878E7976E1/PDA10A-Manual.pdf| title = PDA10A(-EC) Si Amplified Fixed Gain Detector User Manual| access-date = 24 April 2018| publisher = Thorlabs}}{{cite web| url = https://resolvedinstruments.com/DPD80-760nm-photodetector-datasheet| title = DPD80 760nm Datasheet| access-date = 24 April 2018| publisher = Resolved Instruments}} [71] => * [[Phototransistor]]s, which act like amplifying photodiodes. [72] => * [[Pinned photodiode]]s, a photodetector structure with low [[shutter lag|lag]], low [[noise (electronics)|noise]], high [[quantum efficiency]], and low [[dark current (physics)|dark current]], widely used in most CCD and CMOS image sensors.{{cite journal |last1=Fossum |first1=E. R. |last2=Hondongwa |first2=D. B. |title=A Review of the Pinned Photodiode for CCD and CMOS Image Sensors |journal=IEEE Journal of the Electron Devices Society |date=2014 |volume=2 |issue=3 |pages=33–43 |doi=10.1109/JEDS.2014.2306412 |doi-access=free }} [73] => * [[Quantum dot]] [[photoconductor]]s or [[photodiode]]s, which can handle wavelengths in the visible and infrared spectral regions. [74] => * [[Semiconductor detector]]s are employed in gamma and X-ray spectrometry and as particle detectors.{{Citation needed|date=December 2019|reason=removed citation to predatory publisher content}} [75] => * [[Silicon drift detector]]s (SDDs) are X-ray radiation detectors used in x-ray spectrometry (EDS) and [[electron microscopy]] (EDX).{{Cite web|url=https://tools.thermofisher.com/content/sfs/brochures/TN52342_E_0512M_SiliconDrift_H.pdf|title=Silicon Drift Detectors|website=tools.thermofisher.com|publisher=Thermo Scientific}} [76] => [77] => === Photovoltaic === [78] => * [[Photovoltaic]] cells or [[solar cell]]s which produce a [[voltage]] and supply an [[electric current]] when sunlight or certain kinds of light shines on them. [79] => [80] => === Thermal === [81] => * [[Bolometer]]s measure the power of incident electromagnetic radiation via the heating of a material with a temperature-dependent electrical resistance. A [[microbolometer]] is a specific type of bolometer used as a detector in a [[thermal camera]]. [82] => * [[Cryogenic detectors]] are sufficiently sensitive to measure the energy of single [[x-ray]], visible and [[infrared]] [[photon]]s.{{cite book|editor= Enss, Christian|title=Cryogenic Particle Detection|publisher=Springer, Topics in applied physics 99|year=2005|isbn=978-3-540-20113-7}} [83] => * [[Pyroelectric detector]]s detect photons through the heat they generate and the subsequent voltage generated in pyroelectric materials. [84] => * [[Thermopile]]s detect electromagnetic radiation through heat, then generating a voltage in [[thermocouple]]s. [85] => * [[Golay cell]]s detect photons by the heat they generate in a gas-filled chamber, causing the gas to expand and deform a flexible membrane whose deflection is measured. [86] => [87] => === Photochemical === [88] => * [[Photoreceptor cell]]s in the [[retina]] detect light through, for instance, a [[rhodopsin]] photon-induced chemical cascade. [89] => * Chemical detectors, such as [[photographic plate]]s, in which a [[silver halide]] molecule is split into an atom of metallic silver and a halogen atom. The [[photographic developer]] causes adjacent molecules to split similarly. [90] => [91] => === Polarization === [92] => * The [[photorefractive effect]] is used in [[holographic data storage]]. [93] => * Polarization-sensitive photodetectors use [[Birefringence|optically anisotropic]] materials to detect photons of a desired [[linear polarization]].{{cite journal|last1=Yuan|first1=Hongtao|last2=Liu|first2=Xiaoge|last3=Afshinmanesh|first3=Farzaneh|last4=Li|first4=Wei|last5=Xu|first5=Gang|last6=Sun|first6=Jie|last7=Lian|first7=Biao|last8=Curto|first8=Alberto G.|last9=Ye|first9=Guojun|last10=Hikita|first10=Yasuyuki|last11=Shen|first11=Zhixun|last12=Zhang|first12=Shou-Cheng|last13=Chen|first13=Xianhui|last14=Brongersma|first14=Mark|last15=Hwang|first15=Harold Y.|last16=Cui|first16=Yi|title=Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction|journal=Nature Nanotechnology|date=1 June 2015|volume=10|issue=8|pages=707–713|doi=10.1038/nnano.2015.112|pmid=26030655|bibcode=2015NatNa..10..707Y|arxiv=1409.4729}} [94] => [95] => === Graphene/silicon photodetectors === [96] => A graphene/n-type silicon heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity. [[Graphene]] is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.{{cite journal|last1= Yu|first1=Ting|last2=Wang|first2=Feng|last3=Xu|first3=Yang|last4=Ma|first4=Lingling|last5=Pi|first5=Xiaodong|last6=Yang|first6=Deren|title=Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors|journal=Advanced Materials|volume=28|issue=24|pages=4912–4919|date=2016|doi=10.1002/adma.201506140|pmid=27061073|s2cid=205267070 }} [97] => [98] => == See also == [99] => * [[Lighting control system]] [100] => * [[List of sensors]] [101] => * [[Optoelectronics]] [102] => * [[Photoelectric sensor]] [103] => * [[Photosensitivity]] [104] => * [[Readout integrated circuit]] [105] => * [[Resonant-cavity-enhanced photo detector]] [106] => * [[Photodetection]] [107] => {{portalbar|Electronics|Energy|Physics|Technology}} [108] => [109] => == References == [110] => {{reflist|30em}} [111] => [112] => == External links == [113] => *{{Commons category-inline}} [114] => [115] => {{Electronic components}} [116] => [117] => {{authority control}} [118] => [119] => [[Category:Photodetectors| ]] [] => )
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Photodetector

Photodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There are a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response.

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